검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
A new method for characterization of gate overlap capacitances and effective channel size in MOSFETs Tomaszewski D, Gluszko G, Kucharski K, Malesinska J Solid-State Electronics, 159, 184, 2019 |
| 2 |
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements Tomaszewski D, Gluszko G, Lukasiak L, Kucharski K, Malesinska J Solid-State Electronics, 128, 92, 2017 |
| 3 |
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W Solid-State Electronics, 52(12), 1849, 2008 |
| 4 |
Optimized diode analysis of electrical silicon substrate properties Czerwinski A, Simoen E, Claeys C, Klima K, Tomaszewski D, Gibki J, Katcki J Journal of the Electrochemical Society, 145(6), 2107, 1998 |