화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Pattern formation mechanism of a periodically faceted interface during crystallization of Si
Tokairin M, Fujiwara K, Kutsukake K, Kodama H, Usami N, Nakajima K
Journal of Crystal Growth, 312(24), 3670, 2010
2 Growth behavior of faceted Si crystals at grain boundary formation
Fujiwara K, Tsumura S, Tokairin M, Kutsukake K, Usami N, Uda S, Nakajima K
Journal of Crystal Growth, 312(1), 19, 2009
3 Directional growth method to obtain high quality polycrystalline silicon from its melt
Fujiwara K, Pan W, Sawada K, Tokairin M, Usami N, Nose Y, Nomura A, Shishido T, Nakajima K
Journal of Crystal Growth, 292(2), 282, 2006