검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Electrical and Physical Properties of Er-Doped HfO2 High-k Dielectrics Prepared by Atomic Layer Deposition Wu L, Yu HY, Pey KL, Pan JS, Tuominen M, Tois E, Lee DY, Hsu KY, Huang KT, Tao HJ, Mii YJ Electrochemical and Solid State Letters, 13(2), G21, 2010 |
| 2 |
A Family of Heteroleptic Titanium Guanidinates: Synthesis, Thermolysis, and Surface Reactivity Wasslen YA, Tois E, Haukka S, Kreisel KA, Yap GPA, Halls MD, Barry ST Inorganic Chemistry, 49(4), 1976, 2010 |
| 3 |
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O Fedorenko Y, Swerts J, Maes JW, Tois E, Haukka S, Wang CG, Wilk G, Delabie A, Deweerd W, De Gendt S Electrochemical and Solid State Letters, 10(5), H149, 2007 |
| 4 |
Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe Wu D, Lu J, Vainonen-Ahlgren E, Tois E, Tuominen M, Ostling M, Zhang SL Solid-State Electronics, 49(2), 193, 2005 |
| 5 |
HfSiO4 dielectric layers deposited by ALD using HfCl4 and NH2(CH2)(3)Si(OC2H5)(3) precursors Rittersma ZM, Roozeboom F, Verheijen MA, van Berkum JGM, Dao T, Snijders JHM, Vainonen-Ahlgren E, Tois E, Tuominen M, Haukka S Journal of the Electrochemical Society, 151(11), C716, 2004 |
| 6 |
Physical and electrical properties of Zr-silicate dielectric layers deposited by atomic layer deposition Rittersma ZM, Naburgh E, Dao T, Hendriks AHC, Besling WFA, Tois E, Vainonen-Ahlgren E, Tuominen M, Haukka S Electrochemical and Solid State Letters, 6(7), F21, 2003 |