화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Simultaneous production of glyceric acid and hydrogen from the photooxidation of crude glycerol using TiSi2
Kondamudi N, Misra M, Banerjee S, Mohapatra S, Mohapatra S
Applied Catalysis B: Environmental, 126, 180, 2012
2 Preparation of ultrafine particles of silicon base intermetallic compound by arc plasma method
Watanabe T, Itoh H, Ishii Y
Thin Solid Films, 390(1-2), 44, 2001
3 Ion-induced amorphization and regrowth of C49 and C54 TiSi2
Mohadjeri B, Maex K, Donaton RA, Bender H
Journal of the Electrochemical Society, 146(3), 1122, 1999
4 Self-aligned Ti and Co silicides for high performance sub-0.18 mu m CMOS technologies
Kittl JA, Hong QZ
Thin Solid Films, 320(1), 110, 1998
5 Advanced salicides for 0.10 mu m CMOS : Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi2
Kittl JA, Hong QZ, Yang H, Yu N, Samavedam SB, Gribelyuk MA
Thin Solid Films, 332(1-2), 404, 1998
6 Kinetics of TiSi2 Formation and Silicon Consumption During Chemical-Vapor-Deposition
Southwell RP, Seebauer EG
Journal of the Electrochemical Society, 144(6), 2122, 1997
7 Adsorption of Chlorine on TiSi2 - Application to Etching and Deposition of Silicide Films
Ditchfield R, Mendicino MA, Seebauer EG
Journal of the Electrochemical Society, 143(1), 266, 1996
8 Erbium Silicide Films on (100) Silicon, Grown in High-Vacuum - Fabrication and Properties
Kaltsas G, Travlos A, Salamouras N, Nassiopoulos AG, Revva P, Traverse A
Thin Solid Films, 275(1-2), 87, 1996
9 Materials Aspects of Ti and Co Silicidation of Narrow Polysilicon Lines
Kittl JA, Hong QZ
Thin Solid Films, 290-291, 473, 1996
10 Kinetics of Salicide Contact Formation for Thin-Film SOI Transistors
Mendicino MA, Seebauer EG
Journal of the Electrochemical Society, 142(2), L28, 1995