검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applications Watahiki T, Jenichen B, Shayduk R, Tinkham BP, Braun W, Riechert H Journal of Crystal Growth, 311(7), 2179, 2009 |
| 2 |
Praseodymium silicide formation at the Pr2O3/Si interface Watahiki T, Tinkham BP, Jenichen B, Shayduk R, Braun W, Ploog KH Applied Surface Science, 255(3), 758, 2008 |
| 3 |
Post-deposition growth kinetics of Ge on Ge(001) Tinkham BP, Jenichen B, Kaganer VM, Shayduk R, Braun W, Ploog KH Journal of Crystal Growth, 310(15), 3416, 2008 |
| 4 |
As-rich InAs(001)-(2x4) phases investigated by in situ surface x-ray diffraction Tinkham BP, Braun W, Ploog KH, Takahasi M, Mizuki J, Grosse F Journal of Vacuum Science & Technology B, 26(4), 1516, 2008 |
| 5 |
Growth of praseodymium oxide and silicate for high-kappa dielectrics by molecular beam epitaxy Watahiki T, Tinkham BP, Jenichen B, Braun W, Ploog KH Journal of Crystal Growth, 301, 381, 2007 |
| 6 |
Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM Journal of Vacuum Science & Technology B, 24(3), 1622, 2006 |
| 7 |
Pd/Pt/Au ohmic contact for AlSb/InAs0.7Sb0.3 heterostructures Robinson JA, Mohney SE, Boos JB, Tinkham BP, Bennett BR Solid-State Electronics, 50(3), 429, 2006 |
| 8 |
Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface X-ray diffraction Braun W, Kaganer VM, Jenichen B, Satapathy DK, Guo XX, Tinkham BP, Ploog KH Journal of Crystal Growth, 278(1-4), 449, 2005 |
| 9 |
Growth of InAsSb-channel high electron mobility transistor structures Tinkham BP, Bennett BR, Magno R, Shanabrook BV, Boos JB Journal of Vacuum Science & Technology B, 23(4), 1441, 2005 |
| 10 |
Materials growth for InAs high electron mobility transistors and circuits Bennett BR, Tinkham BP, Boos JB, Lange MD, Tsai R Journal of Vacuum Science & Technology B, 22(2), 688, 2004 |