| 1 |
Growth of cubic GaN on 3C-SiC/Si (001) nanostructures
Kemper RM, Hiller L, Stauden T, Pezoldt J, Duschik K, Niendorf T, Maier HJ, Meertens D, Tillmann K, As DJ, Lindner JKN
Journal of Crystal Growth, 378, 291, 2013 |
| 2 |
Frontiers of electron microscopy in materials science 2005
Urban K, Mayer J, Luysberg M, Tillmann K
Journal of Materials Science, 41(14), 4381, 2006 |
| 3 |
Spherical-aberration correction in tandem with the restoration of the exit-plane wavefunction: synergetic tools for the imaging of lattice imperfections in crystalline solids at atomic resolution
Tillmann K, Houben L, Thust A, Urban K
Journal of Materials Science, 41(14), 4420, 2006 |
| 4 |
Quantitative pressure and strain field analysis of helium precipitates in silicon
Hueging N, Luysberg M, Trinkaus H, Tillmann K, Urban K
Journal of Materials Science, 41(14), 4454, 2006 |
| 5 |
Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs : Be heterostructures against thermally activated intermixing
Tillmann K, Luysberg M, Specht P, Weber ER
Thin Solid Films, 437(1-2), 74, 2003 |
| 6 |
Analysis of dislocation densities and nanopipe formation in MBE-grown AlN-layers
Ebling DG, Kirste L, Rattunde M, Portmann J, Brenn R, Benz KW, Tillmann K
Materials Science Forum, 338-3, 1549, 2000 |
| 7 |
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs(001)
Tillmann K, Forster A
Thin Solid Films, 368(1), 93, 2000 |
| 8 |
Critical dimensions for the formation of interfacial misfit dislocations of In0.6Ga0.4As islands on GaAs (001)' (vol 368, pg 93, 2000)
Tillmann K, Forster A
Thin Solid Films, 379(1-2), 313, 2000 |
| 9 |
Growth-Morphology and Misfit Relaxation of MBE-Grown in(0.6)G(0.4)as on GaAs(001)
Tillmann K, Gerthsen D, Forster A, Urban K
Thin Solid Films, 261(1-2), 139, 1995 |
