화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Improved Resistive Switching Memory Characteristics Using Core-Shell IrOx Nano-Dots in Al2O3/WOx Bilayer Structure
Banerjee W, Maikap S, Rahaman SZ, Prakash A, Tien TC, Li WC, Yang JR
Journal of the Electrochemical Society, 159(2), H177, 2012
2 Bipolar resistive switching memory using bilayer TaOx/WOx films
Prakash A, Maikap S, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ
Solid-State Electronics, 77, 35, 2012
3 Growth mode transition of atomic layer deposited Al2O3 on porous TiO2 electrodes of dye-sensitized solar cells
Tien TC, Pan FM, Wang LP, Tsai FY, Lin C
Thin Solid Films, 520(6), 1745, 2012
4 High-kappa HfO2 Nanocrystal Memory Capacitors Prepared by Phase Separation of Atomic-Layer-Deposited HfO2/Al2O3 Nanomixtures
Maikap S, Das A, Wang TY, Tien TC, Chang LB
Journal of the Electrochemical Society, 156(3), K28, 2009
5 Mechanical Performance of YBa2Cu3O7-X-Ag Composites
Tuan WH, Tien TC
Journal of Materials Science Letters, 13(14), 1019, 1994