화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Designing of AlxGa1-xAs/CIGS tandem solar cell by analytical model
Sharbati S, Gharibshahian I, Orouji AA
Solar Energy, 188, 1, 2019
2 Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers
Mansoori A, Addamane SJ, Renteria EJ, Shima DM, Behzadirad M, Vadiee E, Honsberg C, Balakrishnan G
Solar Energy Materials and Solar Cells, 185, 21, 2018
3 Growth of SiC single crystals on patterned seeds by a sublimation method
Yang XL, Chen XF, Peng Y, Xu XG, Hu XB
Journal of Crystal Growth, 439, 7, 2016
4 Simulation study of GaAsP/Si tandem solar cells
Onno A, Harder NP, Oberbeck L, Liu HY
Solar Energy Materials and Solar Cells, 145, 206, 2016
5 High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure
Lazarev S, Bauer S, Forghani K, Barchuk M, Scholz F, Baumbach T
Journal of Crystal Growth, 370, 51, 2013
6 Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
Shah VA, Dobbie A, Myronov M, Leadley DR
Thin Solid Films, 520(8), 3227, 2012
7 Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM
Thin Solid Films, 518(9), 2538, 2010
8 High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers
Liu JQ, Wang JF, Liu YF, Huang K, Hu XJ, Zhang YM, Xu Y, Xu K, Yang H
Journal of Crystal Growth, 311(10), 3080, 2009
9 Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth
Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert EF, Liu L, Tsvetkov D, Hanser D, Wetzel C
Journal of Crystal Growth, 298, 272, 2007
10 The growth of high-quality SiGe films with an intermediate Si layer
Lee SW, Chen PS, Tsai MJ, Chia CT, Liu CW, Chen LJ
Thin Solid Films, 447, 302, 2004