검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Fabrication of nanowires with high aspect ratios utilized by dry etching with SF(6):C(4)F(8) and self-limiting thermal oxidation on Si substrate Park SY, Di Giacomo SJ, Anisha R, Berger PR, Thompson PE, Adesida I Journal of Vacuum Science & Technology B, 28(4), 763, 2010 |
| 2 |
Phosphorus doping of silicon at substrate temperatures above 600 degrees C Thompson PE, Jernigan GG, Simons D, Chi P, Jonker BT, van 't Erve OMJ Thin Solid Films, 518, S270, 2010 |
| 3 |
Special issue: ISMS 2005 - Foreword Iliadis AA, Thompson PE Solid-State Electronics, 50(6), 901, 2006 |
| 4 |
Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications Chung SY, Park SY, Daulton JW, Yu RH, Berger PR, Thompson PE Solid-State Electronics, 50(6), 973, 2006 |
| 5 |
The effect of Sb surfactant assisted growth on SiGe surface morphology Jernigan GG, Thompson PE Thin Solid Films, 472(1-2), 16, 2005 |
| 6 |
Ultrashallow junction formation by point defect engineering Shao L, Thompson PE, van der Heide PAW, Patel S, Chen QY, Wang XM, Chen H, Liu JR, Chu WK Journal of Vacuum Science & Technology B, 22(1), 302, 2004 |
| 7 |
Formation of p(+) shallow junctions using SiGe barriers Thompson PE, Crosby R, Bennett J, Felch S Journal of Vacuum Science & Technology B, 22(5), 2333, 2004 |
| 8 |
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation Sudirgo S, Nandgaonkar RP, Curanovic B, Hebding JL, Saxer RL, Islam SS, Hirschman KD, Rommel SL, Kurinec SK, Thompson PE, Jin N, Berger PR Solid-State Electronics, 48(10-11), 1907, 2004 |
| 9 |
p(+)/n ultrashallow junctions in Si1-xGex formed by molecular beam epitaxy Thompson PE, Bennett J Electrochemical and Solid State Letters, 6(3), G41, 2003 |
| 10 |
Point defect engineering and its application in shallow junction formation Shao L, Liu JR, Thompson PE, Wang XM, Rusakova I, Chen H, Chu WK, Chu K Electrochemical and Solid State Letters, 5(10), G93, 2002 |