화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers
Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F
Applied Surface Science, 291, 11, 2014
2 Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
Lieten RR, Afanas'ev VV, Thoan NH, Degroote S, Walukiewicz W, Borghs G
Journal of the Electrochemical Society, 158(4), G358, 2011