검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Experimental validation of the partial coherence model in spectroscopic ellipsometry and Mueller matrix polarimetry Miranda-Medina M, Garcia-Caurel E, Peinado A, Stchakovsky M, Hingerl K, Ossikovski R Applied Surface Science, 421, 656, 2017 |
| 2 |
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P Journal of Crystal Growth, 306(1), 86, 2007 |
| 3 |
SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q Materials Science Forum, 483, 61, 2005 |
| 4 |
Characterization of thick 2-inch 4H-SiC layers grown by the Continuous Feed - Physical Vapor Transport method Chaussende D, Balloud C, Auvray L, Baillet F, Zielinski M, Juillaguet S, Mermoux M, Pernot E, Camassel J, Pons M, Madar R Materials Science Forum, 457-460, 91, 2004 |
| 5 |
Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD Hallin C, Wahab Q, Ivanov I, Bergman P, Janzen E Materials Science Forum, 457-460, 193, 2004 |
| 6 |
Magneto-optical ellipsometry of systems containing thick layers Postava K, Zivotsky O, Pistora J, Yamaguchi I Thin Solid Films, 455-56, 615, 2004 |
| 7 |
Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 389-3, 171, 2002 |
| 8 |
4H-SiC epitaxial growth for high-power devices Tsuchida H, Kamata I, Jikimoto T, Miyanagi T, Izumi K Materials Science Forum, 433-4, 131, 2002 |
| 9 |
LPCVD growth and structural properties of 4H-SiC epitaxial layers Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 338-3, 145, 2000 |