검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Effect of sapphire substrate nitridation on determining rotation domain in GaN growth Yamaguchi T, Araki T, Saito Y, Kano K, Kanazawa H, Nanishi Y, Teraguchi N, Suzuki A Journal of Crystal Growth, 237, 993, 2002 |
| 2 |
Growth of high-quality InN using low-temperature intermediate layers by RF-MBE Saito Y, Yamaguchi T, Kanazawa H, Kano K, Araki T, Nanishi Y, Teraguchi N, Suzuki A Journal of Crystal Growth, 237, 1017, 2002 |
| 3 |
Growth and characterization of GaGdN and AlGdN on SiC by RF-MBE Teraguchi N, Suzuki A, Nanishi Y Materials Science Forum, 389-3, 1477, 2002 |
| 4 |
Growth of AlN films on SiC substrates by RF-MBE and RF-MEE Teraguchi N, Suzuki A, Saito Y, Yamaguchi T, Araki T, Nanishi Y Journal of Crystal Growth, 230(3-4), 392, 2001 |
| 5 |
Effects of Surface Cleaning on Electrical-Properties for Ni Contacts to P-Type ZnSe Ishikawa H, Tsukui K, Koide Y, Teraguchi N, Tomomura Y, Suzuki A, Murakami M Journal of Vacuum Science & Technology B, 14(3), 1812, 1996 |