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| No. | Article |
|---|---|
| 1 |
Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults Tendille F, De Mierry P, Vennegues P, Chenot S, Teisseire M Journal of Crystal Growth, 404, 177, 2014 |