| 1 |
Etching effect of tertiary-butyl chloride during InP-nanowire growth
Tateno K, Zhang GQ, Gotoh H
Journal of Crystal Growth, 402, 299, 2014 |
| 2 |
Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform
Birowosuto MD, Yokoo A, Zhang GQ, Tateno K, Kuramochi E, Taniyama H, Takiguchi M, Notomi M
Nature Materials, 13(3), 280, 2014 |
| 3 |
Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition
Hoshi T, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Tateno K
Journal of Crystal Growth, 380, 197, 2013 |
| 4 |
InP nanostructures formed in GaP-based nanowires grown on Si(111) substrates
Tateno K, Zhang G, Nakano H
Journal of Crystal Growth, 310(12), 2966, 2008 |
| 5 |
Characteristics of the GaInP burying layers grown by metalorganic chemical vapor deposition on mesa-patterned GaAs substrates
Tateno K, Uenohara H, Kagawa T, Amano C
Journal of Crystal Growth, 209(4), 605, 2000 |
| 6 |
Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition
Tateno K, Amano C
Journal of Crystal Growth, 220(4), 393, 2000 |
