검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
XPS study of H-terminated silicon surface under inert gas and UHV annealing Kawase K, Tanimura J, Kurokawa H, Wakao K, Inone M, Umeda H, Teramoto A Journal of the Electrochemical Society, 152(2), G163, 2005 |
| 2 |
Characteristics of 4H-SiC MOS interface annealed in N2O Fujihira K, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Shiramizu T, Kawase K, Tanimura J, Ozeki T Solid-State Electronics, 49(6), 896, 2005 |
| 3 |
SiC hornoepitaxy on Al-ion-implanted layers for fabricating power device structures Imaizumi M, Tanimura J, Tarui Y, Sugimoto H, Ohtsuka K, Takami T, Ozeki T Journal of Crystal Growth, 237, 1219, 2002 |
| 4 |
Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth Nakahata T, Yamamoto K, Tanimura J, Inagaki T, Furukawa T, Maruno S, Tokuda Y, Miyamoto A, Satoh S, Kiyama H Journal of Crystal Growth, 226(4), 443, 2001 |
| 5 |
Reactive ion etching in CF4/O-2 gas mixtures for fabricating SiC devices Imaizumi M, Tarui Y, Sugimoto H, Tanimura J, Takami T, Ozeki T Materials Science Forum, 338-3, 1057, 2000 |