검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy Tangring I, Song YX, Lai ZH, Wang SM, Sadeghi M, Larsson A Journal of Crystal Growth, 311(7), 1684, 2009 |
| 2 |
Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Larsson A, Wang XD Journal of Crystal Growth, 301, 971, 2007 |
| 3 |
Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m Wang SM, Tangring I, Gu QF, Sadeghi M, Larsson A, Wang XD, Ma CH, Buyanova IA, Chen WM Thin Solid Films, 515(10), 4348, 2007 |
| 4 |
Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy Wei YQ, Wang SM, Wang XD, Zhao QX, Sadeghi M, Tangring I, Larsson A Journal of Crystal Growth, 278(1-4), 747, 2005 |
| 5 |
Optimization of 1.3 mu m metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Gu QF, Larsson A Journal of Crystal Growth, 281(2-4), 220, 2005 |