화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Additive Effect on the Electrochemical Performance of Lithium-Sulfur Battery
Azimi N, Xue Z, Hua LB, Takoudis C, Zhang SS, Zhang ZC
Electrochimica Acta, 154, 205, 2015
2 Fluorinated Electrolytes for Li-S Battery: Suppressing the Self-Discharge with an Electrolyte Containing Fluoroether Solvent
Azimi N, Xue Z, Rago ND, Takoudis C, Gordin ML, Song JX, Wang DH, Zhang ZC
Journal of the Electrochemical Society, 162(1), A64, 2015
3 On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces
Tao Q, Overhage K, Jursich G, Takoudis C
Thin Solid Films, 520(22), 6752, 2012
4 Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors
Rasul A, Zhang J, Gamota D, Singh M, Takoudis C
Thin Solid Films, 518(23), 7024, 2010
5 Composition-Structure-Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition
Tao Q, Jursich G, Majumder P, Singh M, Walkosz W, Gu P, Klie R, Takoudis C
Electrochemical and Solid State Letters, 12(9), G50, 2009
6 Atomic layer deposition of Y2O3 films on silicon using tris(ethylcyclopentadienyl) yttrium precursor and water vapor
Majumder P, Jursich G, Kueltzo A, Takoudis C
Journal of the Electrochemical Society, 155(8), G152, 2008
7 Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx
Katamreddy R, Feist B, Takoudis C
Journal of the Electrochemical Society, 155(8), G163, 2008
8 Reactively sputtered Mo-V nitride thin films as ternary diffusion barriers for copper metallization
Majumder P, Takoudis C
Journal of the Electrochemical Society, 155(10), H703, 2008
9 Nitridation and oxynitridation of Si to control interfacial reaction with HfO2
Katarnreddy R, Inman R, Jursich G, Soulet A, Takoudis C
Thin Solid Films, 516(23), 8498, 2008
10 Atomic layer deposited ultrathin HfO2 and Al2O3 films as diffusion barriers in copper interconnects
Majumder P, Katamreddy R, Takoudis C
Electrochemical and Solid State Letters, 10(10), H291, 2007