| 1 |
Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers
Yamaguchi H, Nagira T, Kawazu Z, Sakaino G, Nishida T, Takemi M
Journal of Crystal Growth, 414, 27, 2015 |
| 2 |
Anomalous behavior of phase separation of InGaAsP on GaAs substrates grown by MOVPE
Ono K, Takemi M
Journal of Crystal Growth, 298, 41, 2007 |
| 3 |
Investigation of optical properties of InGaN multiple quantum wells on free-standing GaN substrates grown by metalorganic vapor phase elpitaxy
Ohno A, Tomita N, Yamada T, Okagawa H, Takemi M
Journal of Crystal Growth, 298, 518, 2007 |
| 4 |
In situ monitoring of growth rate and composition of AlGaInP and InGaAsP by reflection measurements in MOVPE
Watatani C, Hanamaki Y, Takemi M, Ono K, Mihashi Y, Nishimura T
Journal of Crystal Growth, 281(2-4), 227, 2005 |
| 5 |
Composition dependence of InP/GaxIn1-xAsyP1-y/InP interface structures analyzed by X-ray CTR scattering measurements
Tabuchi M, Kyouzu H, Takemi M, Takeda Y
Applied Surface Science, 216(1-4), 526, 2003 |
