검색결과 : 10건
No. | Article |
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1 |
Evidence for a gold trimer on the Si(111)-root 21 x root 21-(Ag + Au) surface Takahashi T, Yamaguchi Y, Shirasawa T, Voegeli W, Tajiri H Applied Surface Science, 432, 147, 2018 |
2 |
DOCK1 inhibition suppresses cancer cell invasion and macropinocytosis induced by self-activating Rac1(P29S) mutation Tomino T, Tajiri H, Tatsuguchi T, Shirai T, Oisaki K, Matsunaga S, Sanematsu F, Sakata D, Yoshizumi T, Maehara Y, Kanai M, Cote JF, Fukui Y, Uruno T Biochemical and Biophysical Research Communications, 497(1), 298, 2018 |
3 |
Microstructures in directly bonded Si substrates Ohara Y, Ueda T, Sakai A, Nakatsuka O, Ogawa M, Zaima S, Toyoda E, Isogai H, Senda T, Izunome K, Tajiri H, Sakata O, Kimura S, Sakata T, Mori H Solid-State Electronics, 53(8), 837, 2009 |
4 |
Structure of the SiC (0001) 3 X 3 reconstruction studied by surface X-ray diffraction Voegeli W, Akimoto K, Aoyama T, Sumitani K, Nakatani S, Tajiri H, Takahashi T, Hisada Y, Mukainakano S, Zhang X, Sugiyama H, Kawata H Applied Surface Science, 252(15), 5259, 2006 |
5 |
Study of the surface structure of Si(111)-6 X 1(3 X 1)-Ag using - X-ray crystal truncation rod scattering Sumitani K, Masuzawa K, Hoshino T, Nakatani S, Takahashi T, Tajiri H, Akimoto K, Sugiyama H, Zhang XW, Kawata H Applied Surface Science, 252(15), 5288, 2006 |
6 |
Surface X-ray diffraction in transmission geometry Tajiri H, Sakata O, Takahashi T Applied Surface Science, 234(1-4), 403, 2004 |
7 |
Sample holder assembly covering a wide range of temperatures for surface X-ray diffraction Tajiri H, Sumitani K, Nakatani S, Takahashi T, Akimoto K, Sugiyama H, Zhang X, Kawata H Applied Surface Science, 237(1-4), 645, 2004 |
8 |
Structural study of SiC(0001)3 x 3 surface by surface X-ray diffraction Aoyama T, Akimoto K, Ichimiya A, Hisada Y, Mukainakano S, Emoto T, Tajiri H, Takahashi T, Sugiyama H, Zhang X, Kawata H Applied Surface Science, 216(1-4), 356, 2003 |
9 |
Current-voltage characteristics and impedance analysis of solid oxide fuel cells for mixed H-2 and CO gases Sasaki K, Hori Y, Kikuchi R, Eguchi K, Ueno A, Takeuchi H, Aizawa M, Tsujimoto K, Tajiri H, Nishikawa H, Uchida Y Journal of the Electrochemical Society, 149(3), A227, 2002 |
10 |
Temperature dependence of carrier recombination lifetime in Si wafers Ichimura M, Tajiri H, Ito T, Arai E Journal of the Electrochemical Society, 145(9), 3265, 1998 |