화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Evidence for a gold trimer on the Si(111)-root 21 x root 21-(Ag + Au) surface
Takahashi T, Yamaguchi Y, Shirasawa T, Voegeli W, Tajiri H
Applied Surface Science, 432, 147, 2018
2 DOCK1 inhibition suppresses cancer cell invasion and macropinocytosis induced by self-activating Rac1(P29S) mutation
Tomino T, Tajiri H, Tatsuguchi T, Shirai T, Oisaki K, Matsunaga S, Sanematsu F, Sakata D, Yoshizumi T, Maehara Y, Kanai M, Cote JF, Fukui Y, Uruno T
Biochemical and Biophysical Research Communications, 497(1), 298, 2018
3 Microstructures in directly bonded Si substrates
Ohara Y, Ueda T, Sakai A, Nakatsuka O, Ogawa M, Zaima S, Toyoda E, Isogai H, Senda T, Izunome K, Tajiri H, Sakata O, Kimura S, Sakata T, Mori H
Solid-State Electronics, 53(8), 837, 2009
4 Structure of the SiC (0001) 3 X 3 reconstruction studied by surface X-ray diffraction
Voegeli W, Akimoto K, Aoyama T, Sumitani K, Nakatani S, Tajiri H, Takahashi T, Hisada Y, Mukainakano S, Zhang X, Sugiyama H, Kawata H
Applied Surface Science, 252(15), 5259, 2006
5 Study of the surface structure of Si(111)-6 X 1(3 X 1)-Ag using - X-ray crystal truncation rod scattering
Sumitani K, Masuzawa K, Hoshino T, Nakatani S, Takahashi T, Tajiri H, Akimoto K, Sugiyama H, Zhang XW, Kawata H
Applied Surface Science, 252(15), 5288, 2006
6 Surface X-ray diffraction in transmission geometry
Tajiri H, Sakata O, Takahashi T
Applied Surface Science, 234(1-4), 403, 2004
7 Sample holder assembly covering a wide range of temperatures for surface X-ray diffraction
Tajiri H, Sumitani K, Nakatani S, Takahashi T, Akimoto K, Sugiyama H, Zhang X, Kawata H
Applied Surface Science, 237(1-4), 645, 2004
8 Structural study of SiC(0001)3 x 3 surface by surface X-ray diffraction
Aoyama T, Akimoto K, Ichimiya A, Hisada Y, Mukainakano S, Emoto T, Tajiri H, Takahashi T, Sugiyama H, Zhang X, Kawata H
Applied Surface Science, 216(1-4), 356, 2003
9 Current-voltage characteristics and impedance analysis of solid oxide fuel cells for mixed H-2 and CO gases
Sasaki K, Hori Y, Kikuchi R, Eguchi K, Ueno A, Takeuchi H, Aizawa M, Tsujimoto K, Tajiri H, Nishikawa H, Uchida Y
Journal of the Electrochemical Society, 149(3), A227, 2002
10 Temperature dependence of carrier recombination lifetime in Si wafers
Ichimura M, Tajiri H, Ito T, Arai E
Journal of the Electrochemical Society, 145(9), 3265, 1998