검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device Ji L, Tan M, Ding C, Honda K, Harasawa R, Yasue Y, Wu Y, Dai P, Tackeuchi A, Bian L, Lu S, Yang H Journal of Crystal Growth, 458, 110, 2017 |
| 2 |
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy Thiru S, Asakawa M, Honda K, Kawaharazuka A, Tackeuchi A, Makimoto T, Horikoshi Y Journal of Crystal Growth, 425, 203, 2015 |
| 3 |
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells Ji L, Lu SL, Wu YY, Dai P, Bian LF, Arimochi M, Watanabe T, Asaka N, Uemura M, Tackeuchi A, Uchida S, Yang H Solar Energy Materials and Solar Cells, 127, 1, 2014 |
| 4 |
Observation of optical anisotropy of highly uniform InAs quantum dots Uemura M, Ohta J, Yamaguchi R, Yamaguchi K, Tackeuchi A Journal of Crystal Growth, 378, 463, 2013 |
| 5 |
Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers Yang Q, Saeki Y, Izumi S, Nukui T, Tackeuchi A, Ishida A, Tatsuoka H Applied Surface Science, 256(22), 6928, 2010 |
| 6 |
Localized exciton dynamics in InGaN quantum well structures Chichibu SF, Azuhata T, Okumura H, Tackeuchi A, Sota T, Mukai T Applied Surface Science, 190(1-4), 330, 2002 |