1 |
Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy Nowak R, Moraru D, Mizuno T, Jablonski R, Tabe M Thin Solid Films, 557, 249, 2014 |
2 |
Observation of discrete dopant potential and its application to Si single-electron devices Tabe M, Moraru D, Ligowski M, Anwar M, Yokoi K, Jablonski R, Mizuno T Thin Solid Films, 518, S38, 2010 |
3 |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer Burbanudin ZA, Nuryadi R, Ishikawa Y, Tabe M Thin Solid Films, 508(1-2), 235, 2006 |
4 |
The 12th International conference on Solid Films and Surfaces (ICSFS-12) - Preface Temmyo J, Tabe M, Nakanishi Y, Fukuda Y Applied Surface Science, 244(1-4), 1, 2005 |
5 |
Diffusion of Li in the silicon oxide films and evaluation of Li-induced surface potential Maeda M, Watanabe T, Imai Y, Ishikawa Y, Tabe M Applied Surface Science, 244(1-4), 61, 2005 |
6 |
Effect of patterning on thermal agglomeration of ultrathin silicon-on-insulator layer Ishikawa Y, Kumezawa M, Nuryadi R, Tabe M Applied Surface Science, 190(1-4), 11, 2002 |
7 |
Thermal agglomeration of single-crystalline Si layer on buried SiO2 in ultrahigh vacuum Nuryadi R, Ishikawa Y, Ono Y, Tabe M Journal of Vacuum Science & Technology B, 20(1), 167, 2002 |
8 |
Field electron emission device using silicon nanoprotrusions Sawada K, Tabe M, Ishikawa Y, Ishida M Journal of Vacuum Science & Technology B, 20(3), 787, 2002 |
9 |
Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers Tabe M, Kumezawa M, Ishikawa Y, Mizuno T Applied Surface Science, 175, 613, 2001 |
10 |
Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure Nuryadi R, Ishikawa Y, Tabe M Applied Surface Science, 159, 121, 2000 |