검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure Chakrabarti S, Panja R, Roy S, Roy A, Samanta S, Dutta M, Ginnaram S, Maikap S, Cheng HM, Tsai LN, Chang YL, Mahapatra R, Jana D, Qiu JT, Yang JR Applied Surface Science, 433, 51, 2018 |
| 2 |
Amorphous tantalum oxyhydroxide homojunction: In situ construction for enhanced hydrogen production Zhang NN, Li GS, Xie TF, Li LP Journal of Colloid and Interface Science, 525, 196, 2018 |
| 3 |
Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices Jeon H, Park J, Jang W, Kim H, Lee K, Shin C, Lee J, Jeon H Current Applied Physics, 17(2), 230, 2017 |
| 4 |
Drastic reduction of RRAM reset current via plasma oxidization of TaOx film Chen XR, Feng J, Bae D Applied Surface Science, 324, 275, 2015 |
| 5 |
Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments Jeon H, Park J, Jang W, Kim H, Song H, Kim H, Seo H, Jeon H Current Applied Physics, 15(9), 1005, 2015 |
| 6 |
Current hysteresis by oxygen vacancy exchange between oxides in Ptia-IGZO/TaOx/W Kwon HM, Kim MH, Lee SR, Kim YB, Choi DK Applied Surface Science, 293, 220, 2014 |
| 7 |
Electrodeposited Ultrafine TaOx/CB Catalysts for PEFC Cathode Application: Their Oxygen Reduction Reaction Kinetics Seo J, Anjum DH, Takanabe K, Kubota J, Domen K Electrochimica Acta, 149, 76, 2014 |
| 8 |
Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs Lee S, Woo J, Lee D, Cha E, Hwang F Solid-State Electronics, 102, 42, 2014 |
| 9 |
Bipolar resistive switching memory using bilayer TaOx/WOx films Prakash A, Maikap S, Lai CS, Tien TC, Chen WS, Lee HY, Chen FT, Kao MJ, Tsai MJ Solid-State Electronics, 77, 35, 2012 |