검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Silicidation and carburization of the tungsten filament in HWCVD with silacyclobutane precursor gases Shi YJ, Tong L, Eustergerling BD, Li XM Thin Solid Films, 519(14), 4442, 2011 |
| 2 |
Effect of filament temperature and deposition time on the formation of tungsten silicide with silane Sveen CE, Shi YJ Thin Solid Films, 519(14), 4447, 2011 |
| 3 |
Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: Determination of the reaction scheme and the gas-phase reaction rates Saito T, Oshima K, Shimogaki Y, Egashira Y, Sugawara K, Takahiro K, Nagata S, Yamaguchi S, Komiyama H Chemical Engineering Science, 62(22), 6403, 2007 |
| 4 |
Kinetic study of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Determination of molecular size and reactivity of gas species Saito T, Shimogaki Y, Egashira Y, Sugawara K, Takahiro K, Nagata S, Yamaguchi S, Komiyama H Thin Solid Films, 513(1-2), 36, 2006 |
| 5 |
Effect of substrate on phase transfon-nation kinetics of WSix films Bharat S, Sahoo R, Katiyar A Thin Solid Films, 462-63, 127, 2004 |
| 6 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 7 |
Silicon-on-insulator substrates with buried tungsten silicide layer Gamble HS, Armstrong BM, Baine P, Bain M, McNeill DW Solid-State Electronics, 45(4), 551, 2001 |
| 8 |
Atom probe analysis of the dissociation of CO and N-2 gases on a W(110)-oriented tip Shimizu T, Ohi A, Tokumoto H Journal of Vacuum Science & Technology A, 17(4), 1587, 1999 |
| 9 |
Properties and thermal stability of chemically vapor deposited W-rich WSix thin films Wang MT, Lin YC, Chuang MS, Chun MC, Chen LJ, Chen MC Journal of Vacuum Science & Technology B, 17(2), 385, 1999 |
| 10 |
Formation of high conductivity WSix layer and its characterization as a gate electrode Byun JS, Lee BH, Park JS, Sohn DK, Choi SJ, Kim JJ Journal of the Electrochemical Society, 145(9), 3228, 1998 |