화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Role of free-radical chain reactions and silylene chemistry in using methyl-substituted silane molecules in hot-wire chemical vapor deposition
Shi YJ
Thin Solid Films, 635, 42, 2017
2 Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films
Wrobel AM, Walkiewicz-Pietrzykowska A, Uznanski P
Thin Solid Films, 564, 222, 2014
3 Modification of polyisoprene-block-poly(vinyl trimethylsilane) block copolymers via hydrosilylation and hydrogenation, and their gas transport properties
Gacal BN, Filiz V, Shishatskiy S, Rangou S, Neumann S, Abetz V
Journal of Polymer Science Part B: Polymer Physics, 51(16), 1252, 2013
4 Depth Profiled XPS Analysis of a Polymerized Silicon-Carbon Thin Film
Scott PR, Wieliczka DM, Kruger MB
Plasma Chemistry and Plasma Processing, 29(6), 559, 2009
5 Glow characterization in direct current plasma polymerization of trimethylsilane
Yu QS, Huang C, Yasuda HK
Journal of Polymer Science Part A: Polymer Chemistry, 42(5), 1042, 2004
6 Effect of UV illumination on deposition of low-k Si-O-C(-H) films by PECVD
Lee HJ, Yang CS, Chi CK
Materials Science Forum, 449-4, 473, 2004
7 Reactions and stability of fluorinated poly(vinyl trimethylsilane) in electrochemical systems
Pud AA, Rogalsky SP, Shapoval GS, Kharitonov AP, Teplyakov VV, Strathmann H, Poncin-Epaillard F
Polymer, 42(5), 1907, 2001
8 A study on the formation and characteristics of the Si-O-C-H composite thin films with low dielectric constant for advanced semiconductor devices
Yang CS, Oh KS, Ryu JY, Kim DC, Shou-Yong J, Choi CK, Lee HJ, Um SH, Chang HY
Thin Solid Films, 390(1-2), 113, 2001
9 Growth and characterization of N-doped SiC films from trimethylsilane
Chen J, Steckl AJ, Loboda MJ
Materials Science Forum, 338-3, 273, 2000
10 Growth of single crystalline 3C-SiC and AlN on Si using porous Si as a compliant seed crystal
Purser D, Jenkins M, Lieu D, Vaccaro F, Faik A, Hasan MA, Leamy HJ, Carlin C, Sardela MR, Zhao QX, Willander M, Karlsteen M
Materials Science Forum, 338-3, 313, 2000