화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 4H-SiC Power Schottky diodes. On the way to solve size limiting issues
Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E
Materials Science Forum, 457-460, 985, 2004
2 Liquid-phase epitaxial growth of heavily doped Al p-type contact layers for SiC devices and resulting ohmic contacts
Syrkin A, Dmitriev V, Kovalenkov O, Bauman D, Crofton J
Materials Science Forum, 389-3, 291, 2002
3 Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density
Syrkin A, Dmitriev V, Yakimova R, Henry A, Janzen E
Materials Science Forum, 389-3, 1173, 2002
4 Silicon carbide microwave limiters
Syrkin A, Dmitriev V, Lapidus A
Materials Science Forum, 389-3, 1411, 2002
5 Porous SiC: New applications through in- and out- dopant diffusion
Mynbaeva M, Kuznetsov N, Lavrent'ev A, Mynbaev K, Wolan JT, Grayson B, Ivantsov V, Syrkin A, Fomin A, Saddow SE
Materials Science Forum, 433-4, 657, 2002
6 Diffusion-welded Al contacts to p-type SiC
Korolkov O, Rang T, Syrkin A, Dmitriev V
Materials Science Forum, 433-4, 697, 2002