검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition Hallstedt J, Suvar E, Persson POA, Hultman L, Wang YB, Radamson HH Applied Surface Science, 224(1-4), 46, 2004 |
| 2 |
The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter Haralson E, Suvar E, Malm G, Radamson H, Wang YB, Ostling M Applied Surface Science, 224(1-4), 330, 2004 |
| 3 |
Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure Suvar E, Haralson E, Radamson HH, Wang YB, Grahn JV, Malm BG, Ostling M Applied Surface Science, 224(1-4), 336, 2004 |
| 4 |
Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD Isheden C, Radamson HH, Suvar E, Hellstrom PE, Ostling M Journal of the Electrochemical Society, 151(6), C365, 2004 |