검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers Czernecki R, Grzanka E, Strak P, Targowski G, Krukowski S, Perlin P, Suski T, Leszczynski M Journal of Crystal Growth, 464, 123, 2017 |
| 2 |
Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells Czernecki R, Grzanka E, Smalc-Koziorowska J, Grzanka S, Schiavon D, Targowski G, Plesiewicz J, Prystawko P, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 414, 38, 2015 |
| 3 |
Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts Sarzynski M, Suski T, Czernecki R, Grzanka E, Marona L, Khachapuridze A, Drozdz P, Pieniak K, Domagala JZ, Leszczynski M, Perlin P Journal of Crystal Growth, 423, 28, 2015 |
| 4 |
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers Czernecki R, Kret S, Kempisty P, Grzanka E, Plesiewicz J, Targowski G, Grzanka S, Bilska M, Smalc-Koziorowska J, Krukowski S, Suski T, Perlin P, Leszczynski M Journal of Crystal Growth, 402, 330, 2014 |
| 5 |
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T Journal of Crystal Growth, 318(1), 496, 2011 |
| 6 |
Fabrication and properties of GaN-based lasers Perlin P, Swietlik T, Marona L, Czernecki R, Suski T, Leszczynski M, Grzegory I, Krukowski S, Nowak G, Kamler G, Czerwinski A, Plusa M, Bednarek M, Rybinski J, Porowski S Journal of Crystal Growth, 310(17), 3979, 2008 |
| 7 |
Properties of InGaN blue laser diodes grown on bulk GaN substrates Perlin P, Suski T, Leszczynski M, Prystawko P, Swietlik T, Marona L, Wisniewski P, Czernecki R, Nowak G, Weyher JL, Kamler G, Borysiuk J, Litwin-Staszewska E, Dmowski L, Piotrzkowski R, Franssen G, Grzanka S, Grzegory I, Porowski S Journal of Crystal Growth, 281(1), 107, 2005 |
| 8 |
Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire Miasojedovas S, Jursenas S, Zukauskas A, Ivanov VY, Godlewski M, Leszczynski M, Perlin P, Suski T Journal of Crystal Growth, 281(1), 183, 2005 |
| 9 |
High-power laser structures grown on bulk GaN crystals Prystawko P, Czernetzki R, Gorczyca L, Targowski G, Wisniewski P, Perlin P, Zielinski M, Suski T, Leszczynski M, Grzegory I, Porowski S Journal of Crystal Growth, 272(1-4), 274, 2004 |
| 10 |
Energy gap in GaN bulk single crystal between 293 and 1237 K Su CH, Palosz W, Zhu S, Lehoczky SL, Grzegory I, Perlin P, Suski T Journal of Crystal Growth, 235(1-4), 111, 2002 |