검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Correlation between texture and mechanical stress durability of thin aluminum films Nussl R, Jewula T, Ruile W, Sulima T, Hansch W Thin Solid Films, 556, 376, 2014 |
| 2 |
Growth of highly textured aluminum films on LiTaO3 with optimized titanium intermediate layers Nussl R, Senft C, Beckmeier D, Jewula T, Ruile W, Sulima T, Hansch W, Eisele I Thin Solid Films, 519(22), 8154, 2011 |
| 3 |
Growth and modification of thin a-Si : H/a-Ge : H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing Chiussi S, Gontad F, Rodriguez R, Serra C, Serra J, Leon B, Sulima T, Hollt L, Eisele I Applied Surface Science, 254(19), 6030, 2008 |
| 4 |
Epitaxy - A way to novel field effect devices Sulima T, Abelein U, Eisele I Thin Solid Films, 517(1), 365, 2008 |
| 5 |
The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning Assmuth A, Stimpel-Lindner T, Senftleben O, Bayerstadler A, Sulima T, Baumgartner H, Eisele I Applied Surface Science, 253(20), 8389, 2007 |
| 6 |
Doping profile dependence of the vertical impact ionization MOSFET's (I-MOS) performance Abelein U, Assmuth A, Iskra P, Schindler M, Sulima T, Eisele I Solid-State Electronics, 51(10), 1405, 2007 |
| 7 |
Annealing and deposition effects of the chemical composition of silicon-rich nitride Andersen KN, Svendsen WE, Stimpel-Lindner T, Sulima T, Baumgartner H Applied Surface Science, 243(1-4), 401, 2005 |
| 8 |
Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping Fink C, Anil KG, Geiger H, Hansch W, Kaesen F, Schulze J, Sulima T, Eisele I Solid-State Electronics, 46(3), 387, 2002 |
| 9 |
Dopant diffusion during rapid thermal oxidation Stadler A, Sulima T, Schulze J, Fink C, Kottantharayil A, Hansch W, Baumgartner H, Eisele I, Lerch W Solid-State Electronics, 44(5), 831, 2000 |
| 10 |
Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111) Schulze J, Fink C, Sulima T, Eisele I, Hansch W Thin Solid Films, 380(1-2), 154, 2000 |