1 |
GaSb quantum rings grown by metal organic molecular beam epitaxy Odashima S, Sakurai S, Wada M, Suemune I Journal of Crystal Growth, 323(1), 233, 2011 |
2 |
Response to "Comment on'Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy"' [J. Crystal Growth 301-302 (2007) 277] Jo M, Suemune I Journal of Crystal Growth, 310(3), 723, 2008 |
3 |
Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy Jo M, Endo M, Kumano H, Suemune I Journal of Crystal Growth, 301, 277, 2007 |
4 |
SiC surface nanostructures induced by self-ordering of nano-facets Tanaka S, Nakagawa H, Suemune I Materials Science Forum, 457-460, 407, 2004 |
5 |
II-VI quantum dots grown by MOVPE Suemune I, Yoshida K, Kumano H, Tawara T, Ueta A, Tanaka S Journal of Crystal Growth, 248, 301, 2003 |
6 |
Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxy Kim BJ, Ok YW, Seong TY, Ashrafi ABMA, Kumano H, Suemune I Journal of Crystal Growth, 252(1-3), 219, 2003 |
7 |
CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxy Ashrafi ABMA, Kumano H, Suemune I, Ok YW, Seong TY Journal of Crystal Growth, 237, 518, 2002 |
8 |
Erbium-doped GaP grown by MOMBE and their optical properties Suemune I, Uesugi K, Shimozawa T, Kumano H, Machida H, Shimoyama N Journal of Crystal Growth, 237, 1423, 2002 |
9 |
Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy Shen XQ, Ramvall P, Riblet P, Aoyagi Y, Hosi K, Tanaka S, Suemune I Journal of Crystal Growth, 209(2-3), 396, 2000 |
10 |
Fabrication of selectively grown II-VI widegap semiconductor photonic dots on (001)GaAs with MOMBE Ueta A, Avramescu A, Suemune I, Machida H, Shimoyama N Journal of Crystal Growth, 209(2-3), 518, 2000 |