검색결과 : 39건
No. | Article |
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1 |
Sample collection from asteroid (162173) Ryugu by Hayabusa2: Implications for surface evolution Morota T, Sugita S, Cho Y, Kanamaru M, Tatsumi E, Sakatanit N, Honda R, Hirata N, Kikuchi H, Yamada M, Yokota Y, Kamedal S, Matsuoka M, Sawada H, Honda C, Kouyama T, Ogawa K, Suzuki H, Yoshioka K, Hayakawa M, Hirata N, Hirabayashi M, Miyamoto H, Michikami T, Hiroi T, Hemmi R, Barnouin OS, Ernst CM, Kitazatou K, Nakamura T, Riu L, Senshu H, Kobayashi H, Sasaki S, Komatsu G, Tanabe N, Fujii Y, Irie T, Suemitsu M, Takaki N, Sugimoto C, Yumoto K, Ishida M, Kato H, Moroi K, Domingue D, Michel P, Pilorget C, Iwata T, Abe M, Ohtake M, Nakauchi Y, Tsumura K, Yabuta H, Ishihara Y, Noguchi R, Matsumoto K, Miura A, Namiki N, Tachibana S, Arakawa M, Ikeda H, Wada K, Mizuno T, Hirose C, Hosoda S, Mori O, Shimada T, Soldini S, Tsukizaki R, Yano H, Ozaki M, Takeuchi H, Yamamoto Y, Okada T, Shimaki Y, Shirai K, Iijima Y, Noda H, Kikuchi S, Yamaguchi T, Ogawa N, Ono G, Mimasu Y, Yoshikawa K, Takahashi T, Takei Y, Fujii A, Nakazawa S, Terui F, Tanaka S, Yoshikawa M, Saiki T, Watanabe S, Tsuda Y Science, 368(6491), 654, 2020 |
2 |
Isolation and characterization of bacterium producing lipid from short-chain fatty acids Okamura Y, Nakai S, Ohkawachi M, Suemitsu M, Takahashi H, Aki T, Matsumura Y, Tajima T, Nakashimada Y, Matsumoto M Bioresource Technology, 201, 215, 2016 |
3 |
Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition Nakazawa H, Miura S, Kamata R, Okuno S, Suemitsu M, Abe T Applied Surface Science, 264, 625, 2013 |
4 |
Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M Thin Solid Films, 520(2), 730, 2011 |
5 |
Epitaxial graphene field-effect transistors on silicon substrates Kang HC, Karasawa H, Miyamoto Y, Handa H, Suemitsu T, Suemitsu M, Otsuji T Solid-State Electronics, 54(9), 1010, 2010 |
6 |
Epitaxial graphene top-gate FETs on silicon substrates Kang HC, Karasawa H, Miyamoto Y, Handa H, Fukidome H, Suemitsu T, Suemitsu M, Otsuji T Solid-State Electronics, 54(10), 1071, 2010 |
7 |
Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure Matsumoto M, Inayoshi Y, Murashige S, Suemitsu M, Nakajima S, Uehara T, Toyoshima Y Journal of Vacuum Science & Technology B, 27(1), 223, 2009 |
8 |
Initial oxidation of Si(110) at studied by real-time synchrotron-radiation x-ray photomission spectroscopy Suemitsu M, Yamamoto Y, Togashi H, Enta Y, Yoshigoe A, Teraoka Y Journal of Vacuum Science & Technology B, 27(1), 547, 2009 |
9 |
The growth of GaN films by alternate source gas supply hot-mesh CVD method Komae Y, Saitou T, Suemitsu M, Ito T, Endoh T, Nakazawa H, Narita Y, Takata M, Akahane T, Yasui K Thin Solid Films, 517(12), 3528, 2009 |
10 |
Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure Matsumoto M, Inayoshi Y, Suemitsu M, Miyamoto E, Yara T, Nakajima S, Uehara T, Toyoshima Y Applied Surface Science, 254(19), 6208, 2008 |