화학공학소재연구정보센터
검색결과 : 39건
No. Article
1 Sample collection from asteroid (162173) Ryugu by Hayabusa2: Implications for surface evolution
Morota T, Sugita S, Cho Y, Kanamaru M, Tatsumi E, Sakatanit N, Honda R, Hirata N, Kikuchi H, Yamada M, Yokota Y, Kamedal S, Matsuoka M, Sawada H, Honda C, Kouyama T, Ogawa K, Suzuki H, Yoshioka K, Hayakawa M, Hirata N, Hirabayashi M, Miyamoto H, Michikami T, Hiroi T, Hemmi R, Barnouin OS, Ernst CM, Kitazatou K, Nakamura T, Riu L, Senshu H, Kobayashi H, Sasaki S, Komatsu G, Tanabe N, Fujii Y, Irie T, Suemitsu M, Takaki N, Sugimoto C, Yumoto K, Ishida M, Kato H, Moroi K, Domingue D, Michel P, Pilorget C, Iwata T, Abe M, Ohtake M, Nakauchi Y, Tsumura K, Yabuta H, Ishihara Y, Noguchi R, Matsumoto K, Miura A, Namiki N, Tachibana S, Arakawa M, Ikeda H, Wada K, Mizuno T, Hirose C, Hosoda S, Mori O, Shimada T, Soldini S, Tsukizaki R, Yano H, Ozaki M, Takeuchi H, Yamamoto Y, Okada T, Shimaki Y, Shirai K, Iijima Y, Noda H, Kikuchi S, Yamaguchi T, Ogawa N, Ono G, Mimasu Y, Yoshikawa K, Takahashi T, Takei Y, Fujii A, Nakazawa S, Terui F, Tanaka S, Yoshikawa M, Saiki T, Watanabe S, Tsuda Y
Science, 368(6491), 654, 2020
2 Isolation and characterization of bacterium producing lipid from short-chain fatty acids
Okamura Y, Nakai S, Ohkawachi M, Suemitsu M, Takahashi H, Aki T, Matsumura Y, Tajima T, Nakashimada Y, Matsumoto M
Bioresource Technology, 201, 215, 2016
3 Effects of pulse bias on structure and properties of silicon/nitrogen-incorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Nakazawa H, Miura S, Kamata R, Okuno S, Suemitsu M, Abe T
Applied Surface Science, 264, 625, 2013
4 Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology
Bantaculo R, Saitoh E, Miyamoto Y, Handa H, Suemitsu M
Thin Solid Films, 520(2), 730, 2011
5 Epitaxial graphene field-effect transistors on silicon substrates
Kang HC, Karasawa H, Miyamoto Y, Handa H, Suemitsu T, Suemitsu M, Otsuji T
Solid-State Electronics, 54(9), 1010, 2010
6 Epitaxial graphene top-gate FETs on silicon substrates
Kang HC, Karasawa H, Miyamoto Y, Handa H, Fukidome H, Suemitsu T, Suemitsu M, Otsuji T
Solid-State Electronics, 54(10), 1071, 2010
7 Ammonia-free deposition of silicon nitride films using pulsed-plasma chemical vapor deposition under near atmospheric pressure
Matsumoto M, Inayoshi Y, Murashige S, Suemitsu M, Nakajima S, Uehara T, Toyoshima Y
Journal of Vacuum Science & Technology B, 27(1), 223, 2009
8 Initial oxidation of Si(110) at studied by real-time synchrotron-radiation x-ray photomission spectroscopy
Suemitsu M, Yamamoto Y, Togashi H, Enta Y, Yoshigoe A, Teraoka Y
Journal of Vacuum Science & Technology B, 27(1), 547, 2009
9 The growth of GaN films by alternate source gas supply hot-mesh CVD method
Komae Y, Saitou T, Suemitsu M, Ito T, Endoh T, Nakazawa H, Narita Y, Takata M, Akahane T, Yasui K
Thin Solid Films, 517(12), 3528, 2009
10 Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Matsumoto M, Inayoshi Y, Suemitsu M, Miyamoto E, Yara T, Nakajima S, Uehara T, Toyoshima Y
Applied Surface Science, 254(19), 6208, 2008