검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Chowdhury I, Chandrasekhar MVS, Klein PB, Caldwell JD, Sudarshan T Journal of Crystal Growth, 316(1), 60, 2011 |
| 2 |
Investigation on small growth pits in 4H silicon carbide epilayers Ma XY, Chang HR, Zhang QC, Sudarshan T Journal of Crystal Growth, 279(3-4), 425, 2005 |
| 3 |
Delineating structural defects in highly doped n-type 4H-SiC substrates using a combination of thermal diffusion and molten KOH etching Zhang ZH, Gao Y, Sudarshan T Electrochemical and Solid State Letters, 7(11), G264, 2004 |
| 4 |
Nondestructive defect characterization of SiC epilayers and its significance for SiC device research Ma X, Dudley M, Sudarshan T Materials Science Forum, 457-460, 601, 2004 |