| 1 |
Analysis of ballistic and quasi-ballistic hole transport properties in germanium nanowires based on an extended "Top of the Barrier" model
Tanaka H, Suda J, Kimoto T
Solid-State Electronics, 123, 143, 2016 |
| 2 |
A small point regarding DLVO coagulation conditions
Lin F, Suda J, Yeung A
Journal of Colloid and Interface Science, 430, 113, 2014 |
| 3 |
Impact of surface step heights of 6H-SiC (0001) vicinal substrates in heteroepitaxial growth of 2H-AlN
Okumura H, Horita M, Kimoto T, Suda J
Applied Surface Science, 254(23), 7858, 2008 |
| 4 |
A comparative study of nonpolar a-plane and m-plane AlN grown on 4H-SiC by plasma-assisted molecular-beam epitaxy
Suda J, Horita M, Armitage R, Kimoto T
Journal of Crystal Growth, 301, 410, 2007 |
| 5 |
Mechanism of stabilization of zincblende GaN on hexagonal substrates: Insight gained from growth on ZrB2(0001)
Armitage R, Nishizono K, Suda J, Kimoto T
Journal of Crystal Growth, 284(3-4), 369, 2005 |
| 6 |
Dose designing for high-voltage 4H-SiC RESURF MOSFETs - device simulation and fabrication
Kawano H, Kimoto T, Suda J, Matsunami H
Materials Science Forum, 483, 809, 2005 |
| 7 |
Short-Channel Effects in 4H-SiC MOSFETs
Noborio M, Kanzaki Y, Suda J, Kimoto T, Matsunami H
Materials Science Forum, 483, 821, 2005 |
| 8 |
Structure and dynamics of poly(N-isopropylacrylamide)-clay nanocomposite gel
Shibayama M, Suda J, Karino T, Okabe S, Takehisa T, Haraguchi K
Macromolecules, 37(25), 9606, 2004 |
| 9 |
4H-SiC MOSFETs with a novel channel structure (sandwiched channel MOSFET)
Kaido J, Kimoto T, Suda J, Matsunami H
Materials Science Forum, 457-460, 1409, 2004 |
| 10 |
High channel mobilities of MOSFETs on highly-doped 4H-SiC (11-20) face by oxidation in N2O ambient
Kanzaki Y, Kinbara H, Kosugi H, Suda J, Kimoto T, Matsunami H
Materials Science Forum, 457-460, 1429, 2004 |
