검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions Bae MS, Yun I Solid-State Electronics, 156, 48, 2019 |
| 2 |
New procedure for the extraction of a-Si : H TFTs model parameters in the subthreshold region Resendiz L, Estrada M, Cerdeira A Solid-State Electronics, 47(8), 1351, 2003 |
| 3 |
A unified model for high-frequency current noise of MOSFETs Teng HF, Jang SL, Juang MH Solid-State Electronics, 47(11), 2043, 2003 |
| 4 |
Meyer-Neldel parameter as a figure of merit for quality of thin-film-transistor active layer? Pichon L, Mercha A, Routoure JM, Carin R, Bonnaud O, Mohammed-Brahim T Thin Solid Films, 427(1-2), 350, 2003 |
| 5 |
Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs Zeng Y, Softic A, White MH Solid-State Electronics, 46(10), 1579, 2002 |