화학공학소재연구정보센터
검색결과 : 27건
No. Article
1 Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (001) substrate
Wu YP, Wang YJ, Sun K, Mi ZT
Journal of Crystal Growth, 507, 65, 2019
2 Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate
Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ
Journal of Crystal Growth, 507, 402, 2019
3 Growth of InAs quantum dots on vicinal GaAs substrates by molecular beam epitaxy
Weir N, Yao RZ, Lee CS, Guo W
Journal of Crystal Growth, 451, 79, 2016
4 Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT
Journal of Crystal Growth, 456, 151, 2016
5 Silicon surface preparation for III-V molecular beam epitaxy
Madiomanana K, Bahri M, Rodriguez JB, Largeau L, Cerutti L, Mauguin O, Castellano A, Patriarche G, Tournie E
Journal of Crystal Growth, 413, 17, 2015
6 Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics
Rance WL, Norman AG, Ptak AJ
Journal of Crystal Growth, 363, 40, 2013
7 Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
Novikov SV, Staddon CR, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT
Journal of Crystal Growth, 350(1), 80, 2012
8 Wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
Novikov SV, Staddon CR, Powell REL, Akimov AV, Luckert F, Edwards PR, Martin RW, Kent AJ, Foxon CT
Journal of Crystal Growth, 322(1), 23, 2011
9 Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals
Novikov SV, Staddon CR, Foxon CT, Luckert F, Edwards PR, Martin RW, Kent AJ
Journal of Crystal Growth, 323(1), 80, 2011
10 Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison
Breuer S, Hilse M, Geelhaar L, Riechert H
Journal of Crystal Growth, 323(1), 311, 2011