화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks
Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ
Journal of Vacuum Science & Technology B, 26(1), 232, 2008
2 Role of defects at nanoscale ZnO and Cu(In,Ga)Se-2 semiconductor interfaces
Strzhemechny YM
Journal of Vacuum Science & Technology A, 24(4), 1233, 2006
3 On microscopic compositional and electrostatic properties of grain boundaries in polycrystalline CuIn1-xGaxSe2
Hetzer MJ, Strzhemechny YM, Gao M, Goss S, Contreras MA, Zunger A, Brillson LJ
Journal of Vacuum Science & Technology B, 24(4), 1739, 2006
4 Near-surface defect distributions in Cu(In,Ga)Se-2
Rockett A, Liao D, Heath JT, Cohen JD, Strzhemechny YM, Brillson LJ, Ramanathan K, Shafarman WN
Thin Solid Films, 431-432, 301, 2003
5 Near-surface electronic defects and morphology of CuIn1-xGaxSe2
Strzhemechny YM, Smith PE, Bradley ST, Liao DX, Rockett AA, Ramanathan K, Brillson LJ
Journal of Vacuum Science & Technology B, 20(6), 2441, 2002
6 Surface modification of polyethylene films via bromination: Reactions of brominated polyethylene with aromatic thiolate compounds
Chanunpanich N, Ulman A, Malagon A, Strzhemechny YM, Schwarz SA, Janke A, Kratzmueller T, Braun HG
Langmuir, 16(7), 3557, 2000
7 Surface modification of polyethylene through bromination
Chanunpanich N, Ulman A, Strzhemechny YM, Schwarz SA, Janke A, Braun HG, Kraztmuller T
Langmuir, 15(6), 2089, 1999
8 Secondary-Ion Mass-Spectrometry Study of Silicon Surface Preparation and the Polystyrene/Silicon Interface
Strzhemechny YM, Schwarz SA, Schachter J, Rafailovich MH, Sokolov J
Journal of Vacuum Science & Technology A, 15(3), 894, 1997