화학공학소재연구정보센터
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No. Article
1 Analysis of InAsSb/GaAs submonolayer stacks
Quandt D, Blasing J, Strittmatter A
Journal of Crystal Growth, 494, 1, 2018
2 Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping
Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A
Journal of Crystal Growth, 440, 6, 2016
3 Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality
Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A
Journal of Crystal Growth, 414, 105, 2015
4 Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers
Strittmatter A, Teepe M, Knollenberg C, Johnson NM
Journal of Crystal Growth, 314(1), 1, 2011
5 Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots
Strittmatter A, Germann TD, Kettler T, Posilovic K, Pohl J, Pohl UW, Bimberg D
Journal of Crystal Growth, 310(23), 5066, 2008
6 Quantum-dot semiconductor disk lasers
Germann TD, Strittmatter A, Pohl UW, Bimberg D, Rautiainen J, Guina M, Okhotnikov OG
Journal of Crystal Growth, 310(23), 5182, 2008
7 MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 mu m
Germann TD, Strittmatter A, Kettler T, Posilovic K, Pohl UW, Bimberg D
Journal of Crystal Growth, 298, 591, 2007
8 Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
Strittmatter A, Reissmann L, Trepk T, Pohl UW, Bimberg D, Zettler JT
Journal of Crystal Growth, 272(1-4), 76, 2004
9 Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
Strittmatter A, Reissmann L, Seguin R, Rodt S, Brostowski A, Pohl UW, Bimberg D, Hahn E, Gerthsen D
Journal of Crystal Growth, 272(1-4), 415, 2004
10 Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
Strittmatter A, Bimberg D, Krost A, Blasing J, Veit P
Journal of Crystal Growth, 221, 293, 2000