검색결과 : 10건
No. | Article |
---|---|
1 |
Analysis of InAsSb/GaAs submonolayer stacks Quandt D, Blasing J, Strittmatter A Journal of Crystal Growth, 494, 1, 2018 |
2 |
Metalorganic chemical vapor phase epitaxy of narrow-band distributed Bragg reflectors realized by GaN:Ge modulation doping Berger C, Lesnik A, Zettler T, Schmidt G, Veit P, Dadgar A, Blasing J, Christen J, Strittmatter A Journal of Crystal Growth, 440, 6, 2016 |
3 |
Growth of AlInN/GaN distributed Bragg reflectors with improved interface quality Berger C, Dadgar A, Blasing J, Lesnik A, Veit P, Schmidt G, Hempel T, Christen J, Krost A, Strittmatter A Journal of Crystal Growth, 414, 105, 2015 |
4 |
Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers Strittmatter A, Teepe M, Knollenberg C, Johnson NM Journal of Crystal Growth, 314(1), 1, 2011 |
5 |
Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots Strittmatter A, Germann TD, Kettler T, Posilovic K, Pohl J, Pohl UW, Bimberg D Journal of Crystal Growth, 310(23), 5066, 2008 |
6 |
Quantum-dot semiconductor disk lasers Germann TD, Strittmatter A, Pohl UW, Bimberg D, Rautiainen J, Guina M, Okhotnikov OG Journal of Crystal Growth, 310(23), 5182, 2008 |
7 |
MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 mu m Germann TD, Strittmatter A, Kettler T, Posilovic K, Pohl UW, Bimberg D Journal of Crystal Growth, 298, 591, 2007 |
8 |
Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance Strittmatter A, Reissmann L, Trepk T, Pohl UW, Bimberg D, Zettler JT Journal of Crystal Growth, 272(1-4), 76, 2004 |
9 |
Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers Strittmatter A, Reissmann L, Seguin R, Rodt S, Brostowski A, Pohl UW, Bimberg D, Hahn E, Gerthsen D Journal of Crystal Growth, 272(1-4), 415, 2004 |
10 |
Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer Strittmatter A, Bimberg D, Krost A, Blasing J, Veit P Journal of Crystal Growth, 221, 293, 2000 |