검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 20(3), 1205, 2002 |
| 2 |
High performance InP high electron mobility transistors by valved phosphorus cracker Chin TP, Chen YC, Barsky M, Wojtowicz M, Grundbacher R, Lai R, Streit DC, Block TR Journal of Vacuum Science & Technology B, 18(3), 1642, 2000 |
| 3 |
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC Journal of Vacuum Science & Technology B, 18(3), 1658, 2000 |
| 4 |
Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl-2/BCl3/Ar plasmas Nordheden KJ, Hua XD, Lee YS, Yang LW, Streit DC, Yen HC Journal of Vacuum Science & Technology B, 17(1), 138, 1999 |
| 5 |
InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker Chin TP, Gutierrez-Aitken AL, Cowles J, Kaneshiro EN, Han AC, Block TR, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1136, 1999 |
| 6 |
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs Sandhu RS, Bhasin G, Moore CD, U'Ren GD, Goorsky MS, Chin TP, Wojtowicz M, Block TR, Streit DC Journal of Vacuum Science & Technology B, 17(3), 1163, 1999 |
| 7 |
Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 16(3), 1475, 1998 |
| 8 |
Commercial Heterojunction Bipolar-Transistor Production by Molecular-Beam Epitaxy Streit DC, Oki AK, Block TR, Lammert MD, Hoppe MM, Umemoto DK, Wojtowicz M Journal of Vacuum Science & Technology B, 14(3), 2216, 1996 |
| 9 |
Molecular-Beam Epitaxy Growth and Characterization of InGaAlAs-Collector Heterojunction Bipolar-Transistors with 140 GHz - F-Max and 20 V Breakdown Block TR, Wojtowicz M, Cowles J, Tran L, Oki AK, Streit DC Journal of Vacuum Science & Technology B, 14(3), 2221, 1996 |
| 10 |
GaAs and InP Selective Molecular-Beam Epitaxy Streit DC, Block TR, Han AC, Wojtowicz M, Umemoto DK, Kobayashi K, Oki AK, Liu PH, Lai R, Ng GI Journal of Vacuum Science & Technology B, 13(2), 771, 1995 |