검색결과 : 58건
| No. | Article |
|---|---|
| 1 |
The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data Terekhov VA, Nesterov DN, Domashevskaya EP, Geraskina EV, Manyakin MD, Kurganskii SI, Kamayev GN, Antonenko AH, Turishchev SY Applied Surface Science, 382, 331, 2016 |
| 2 |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors Hsieh CP, Liao MH, Lee CC, Cheng TC, Wang CP, Huang PC, Cheng SW Thin Solid Films, 618, 172, 2016 |
| 3 |
2D strain measurement in sub-10 nm SiGe layer with dark-field electron holography Hoang VV, Cho YJ, Yoo JH, Yang JM, Choi S, Jung W, Choi YH, Hong SK Current Applied Physics, 15(11), 1529, 2015 |
| 4 |
Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S Solid-State Electronics, 113, 127, 2015 |
| 5 |
Fabrication of ultra-thin strained silicon on insulator by He implantation and ion cut techniques and characterization Mu ZQ, Xue ZY, Wei X, Chen D, Zhang M, Di ZF, Wang X Thin Solid Films, 557, 101, 2014 |
| 6 |
Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication Lee WCT, Bishop N, Thompson DL, Xue K, Scappucci G, Cederberg JG, Gray JK, Han SM, Celler GK, Carroll MS, Simmons MY Applied Surface Science, 265, 833, 2013 |
| 7 |
Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks Flachowsky S, Herrmann T, Hontschel J, Illgen R, Ong SY, Wiatr M Solid-State Electronics, 88, 27, 2013 |
| 8 |
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices Agopian PGD, Bordallo CCM, Simoen E, Claeys C, Martino JA Solid-State Electronics, 90, 155, 2013 |
| 9 |
Subband engineering in n-type silicon nanowires using strain and confinement Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H Solid-State Electronics, 70, 73, 2012 |
| 10 |
High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition He H, Brabant P, Chung K, Shinriki M, Adam T, Reznicek A, Sadana D, Hasaka S, Francis T Thin Solid Films, 520(8), 3175, 2012 |