| 1 |
Material lattice orientation effect of local Si1-xGex stressors on the width dependence of high-k metal gate PMOSFETs
Lee CC, Huang PC
Current Applied Physics, 18, S2, 2018 |
| 2 |
Material lattice orientation effect of local Si1-xGex stressors on the width dependence of high-k metal gate PMOSFETs
Lee CC, Huang PC
Current Applied Physics, 18, S2, 2018 |
| 3 |
Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension
Chang WT, Lin YS, Shih CT
Solid-State Electronics, 110, 10, 2015 |
| 4 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm
Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Bourdelle KK, Hartmann JM, Zhao QT, Mantl S
Solid-State Electronics, 97, 76, 2014 |
| 5 |
Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions
Richter S, Blaeser S, Knoll L, Trellenkamp S, Fox A, Schafer A, Hartmann JM, Zhao QT, Mantl S
Solid-State Electronics, 98, 75, 2014 |
| 6 |
Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator
Kim Y, Takenaka M, Osada T, Hata M, Takagi S
Thin Solid Films, 557, 342, 2014 |
| 7 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time
Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D
Solid-State Electronics, 61(1), 58, 2011 |
| 8 |
Investigation of the performance of strained-SiGe vertical IMOS-transistors
Dinh TV, Kraus R, Jungemann C
Solid-State Electronics, 54(9), 942, 2010 |
| 9 |
1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Yan L, Simoen E, Olsen SH, Akheyar A, Claeys C, O'Neill AG
Solid-State Electronics, 53(11), 1177, 2009 |
| 10 |
Impact ionization rates for strained Si and SiGe
Dinh TV, Jungemann C
Solid-State Electronics, 53(12), 1318, 2009 |
