검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Controlling the structure and ferroic properties of strained epitaxial NiTiO3 thin films on sapphire by post-deposition annealing Varga T, Droubay TC, Kovarik L, Hu D, Chambers SA Thin Solid Films, 662, 47, 2018 |
| 2 |
Structure characterization and strain relief analysis in CVD growth of boron phosphide on silicon carbide Li GL, Abbott JKC, Brasfield JD, Liu PZ, Dale A, Duscher G, Rack PD, Feigerle CS Applied Surface Science, 327, 7, 2015 |
| 3 |
Residual stress measurement in thin films at sub-micron scale using Focused Ion Beam milling and imaging Song X, Yeap KB, Zhu J, Belnoue J, Sebastiani M, Bemporad E, Zeng KY, Korsunsky AM Thin Solid Films, 520(6), 2073, 2012 |
| 4 |
High current density and high PVCR Si/Si1-xGex DQW RTD formed with quadruple-layer buffer Maekawa H, Sano Y, Ueno C, Suda Y Journal of Crystal Growth, 301, 1017, 2007 |
| 5 |
Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures Gray AL, Stintz A, Malloy KJ, Newell TC, Lester LF Journal of Crystal Growth, 222(4), 726, 2001 |
| 6 |
Thallium overlayers on Si(111): Structures of a "new" group III element Vitali L, Leisenberger FP, Ramsey MG, Netzer FP Journal of Vacuum Science & Technology A, 17(4), 1676, 1999 |
| 7 |
Bi surfactant mediated epitaxy of Ge on Si(111) Horn-von Hoegen M, Heringdorf FJMZ, Kammler M, Schaeffer C, Reinking D, Hofmann KR Thin Solid Films, 343-344, 579, 1999 |
| 8 |
Surfactant-grown low-doped germanium layers on silicon with high electron mobilities Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M Thin Solid Films, 321(1-2), 125, 1998 |
| 9 |
Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization Kammler M, Reinking D, Hofmann KR, Horn-von Hoegen M Thin Solid Films, 336(1-2), 29, 1998 |
| 10 |
Surfactant-Mediated Epitaxy of Ge on Si(111) - The Role of Kinetics and Characterization of the Ge Layers Voigtlander B, Zinner A Journal of Vacuum Science & Technology A, 12(4), 1932, 1994 |