검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Modeling dual inlaid feature construction Stout PJ, Rauf S, Nagy A, Ventzek PLG Journal of Vacuum Science & Technology B, 24(3), 1344, 2006 |
| 2 |
Gate etch process model for static random access memory bit cell and FinFET construction Stout PJ, Rauf S, Peters RD, Ventzek PLG Journal of Vacuum Science & Technology B, 24(4), 1810, 2006 |
| 3 |
Modeling HfO2 atomic layer chemical vapor deposition on blanket wafer, via, and trench structures using HfCl4/H2O Stout PJ, Adams V, Ventzek PLG Journal of Vacuum Science & Technology B, 24(5), 2372, 2006 |
| 4 |
Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment-feature profile model Zhang D, Stout PJ, Ventzek PLG Journal of Vacuum Science & Technology A, 21(1), 265, 2003 |
| 5 |
Modeling high power magnetron copper seed deposition: Effect of feature geometry on coverage Stout PJ, Zhang D, Ventzek PLG Journal of Vacuum Science & Technology A, 21(3), 596, 2003 |
| 6 |
Modeling the impact of photoresist trim etch process on photoresist surface roughness Rauf S, Stout PJ, Cobb J Journal of Vacuum Science & Technology B, 21(2), 655, 2003 |
| 7 |
Application and simulation of low temperature plasma processes in semiconductor manufacturing Ventzek PLG, Rauf S, Stout PJ, Zhang D, Dauksher W, Hall E Applied Surface Science, 192(1-4), 201, 2002 |
| 8 |
Comparing ionized physical vapor deposition and high power magnetron copper seed deposition Stout PJ, Zhang D, Rauf S, Ventzek PLG Journal of Vacuum Science & Technology B, 20(6), 2421, 2002 |
| 9 |
Mechanisms of SiC(111) step flow growth Stout PJ Materials Science Forum, 338-3, 213, 2000 |
| 10 |
Modeling surface kinetics and morphology during 3C, 2H, 4H, and 6H-SiC (111) step-flow growth Stout PJ Journal of Vacuum Science & Technology A, 16(6), 3314, 1998 |