검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70-85% Ge Loo R, Souriau L, Ong P, Kenis K, Rip J, Storck P, Buschhardt T, Vorderwestner M Journal of Crystal Growth, 324(1), 15, 2011 |
| 2 |
Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures Storck P, Vorderwestner M, Kondratyev A, Talalaev R, Amamchyan A, Woelk E Thin Solid Films, 518, S23, 2010 |
| 3 |
Structure and defects of epitaxial Si(111) layers on Y2O3(111)/Si(111) support systems Borschel C, Ronning C, Hofsass H, Giussani A, Zaumseil P, Wenger C, Storck P, Schroeder T Journal of Vacuum Science & Technology B, 27(1), 305, 2009 |
| 4 |
Kinetics of SiGe chemical vapor deposition from chloride precursors Lovtsus AA, Segal AS, Sid'ko AP, Talalaev RA, Storck P, Kadinski L Journal of Crystal Growth, 287(2), 446, 2006 |