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| No. | Article |
|---|---|
| 1 |
Photoelectric properties of highly excited GaN : Fe epilayers, zgrown by modulation- and continuous-doping techniques Bougrioua Z, Azize M, Beaumont B, Gibart P, Malinauskas T, Neimontas K, Mekys A, Storasta J, Jarasiunas K Journal of Crystal Growth, 300(1), 228, 2007 |