검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
Emergence of room-temperature ferroelectricity at reduced dimensions Lee D, Lu H, Gu Y, Choi SY, Li SD, Ryu S, Paudel TR, Song K, Mikheev E, Lee S, Stemmer S, Tenne DA, Oh SH, Tsymbal EY, Wu X, Chen LQ, Gruverman A, Eom CB Science, 349(6254), 1314, 2015 |
| 2 |
Element Specific Monolayer Depth Profiling Macke S, Radi A, Hamann-Borrero JE, Verna A, Bluschke M, Bruck S, Goering E, Sutarto R, He FZ, Cristiani G, Wu M, Benckiser E, Habermeier HU, Logvenov G, Gauquelin N, Botton GA, Kajdos AP, Stemmer S, Sawatzky GA, Haverkort MW, Keimer B, Hinkov V Advanced Materials, 26(38), 6554, 2014 |
| 3 |
Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy Moetakef P, Ouellette DG, Zhang JY, Cain TA, Allen SJ, Stemmer S Journal of Crystal Growth, 355(1), 166, 2012 |
| 4 |
Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011) Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 159(6), S17, 2012 |
| 5 |
Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors Long RD, Shin B, Monaghan S, Cherkaoui K, Cagnon J, Stemmer S, McIntyre PC, Hurley PK Journal of the Electrochemical Society, 158(5), G103, 2011 |
| 6 |
Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC Journal of Crystal Growth, 312(14), 2089, 2010 |
| 7 |
Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm(2) V-1 s(-1) Son J, Moetakef P, Jalan B, Bierwagen O, Wright NJ, Engel-Herbert R, Stemmer S Nature Materials, 9(6), 482, 2010 |
| 8 |
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001) Shin B, Cagnon J, Long RD, Hurley PK, Stemmer S, McIntyre PC Electrochemical and Solid State Letters, 12(8), G40, 2009 |
| 9 |
High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication Choi DH, Harris JS, Kim E, McIntyre PC, Cagnon J, Stemmer S Journal of Crystal Growth, 311(7), 1962, 2009 |
| 10 |
Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3 Engel-Herbert R, Jalan B, Cagnon J, Stemmer S Journal of Crystal Growth, 312(1), 149, 2009 |