화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Ablation mechanisms of nanosecond and picosecond laser scribing for metal halide perovskite module interconnection - An experimental and numerical analysis
Schultz C, Fenske M, Dagar J, Zeiser A, Bartelt A, Schlatmann R, Unger E, Stegemann B
Solar Energy, 198, 410, 2020
2 Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Stegemann B, Gad KM, Balamou P, Sixtensson D, Vossing D, Kasemann M, Angermann H
Applied Surface Science, 395, 78, 2017
3 Laser-induced local phase transformation of CIGSe for monolithic serial interconnection: Analysis of the material properties
Schultz C, Schuele M, Stelmaszczyk K, Weizman M, Gref O, Friedrich F, Wolf C, Papathanasiou N, Kaufmann CA, Rau B, Schlatmann R, Quaschning V, Fink F, Stegemann B
Solar Energy Materials and Solar Cells, 157, 636, 2016
4 Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation
Gad KM, Vossing D, Balamou P, Hiller D, Stegemann B, Angermann H, Kasemann M
Applied Surface Science, 353, 1269, 2015
5 A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source
Sarikov A, Stegemann B, Schmidt M
Thin Solid Films, 518(16), 4662, 2010
6 Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements
Rolver R, Berghoff B, Batzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B
Thin Solid Films, 516(20), 6763, 2008
7 Crystallization of antimony nanoparticles: Pattern formation and fractal growth
Stegemann B, Ritter C, Kaiser B, Rademann K
Journal of Physical Chemistry B, 108(38), 14292, 2004