1 |
Ablation mechanisms of nanosecond and picosecond laser scribing for metal halide perovskite module interconnection - An experimental and numerical analysis Schultz C, Fenske M, Dagar J, Zeiser A, Bartelt A, Schlatmann R, Unger E, Stegemann B Solar Energy, 198, 410, 2020 |
2 |
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities Stegemann B, Gad KM, Balamou P, Sixtensson D, Vossing D, Kasemann M, Angermann H Applied Surface Science, 395, 78, 2017 |
3 |
Laser-induced local phase transformation of CIGSe for monolithic serial interconnection: Analysis of the material properties Schultz C, Schuele M, Stelmaszczyk K, Weizman M, Gref O, Friedrich F, Wolf C, Papathanasiou N, Kaufmann CA, Rau B, Schlatmann R, Quaschning V, Fink F, Stegemann B Solar Energy Materials and Solar Cells, 157, 636, 2016 |
4 |
Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation Gad KM, Vossing D, Balamou P, Hiller D, Stegemann B, Angermann H, Kasemann M Applied Surface Science, 353, 1269, 2015 |
5 |
A model of the passivation of ultrathin SiO2 layer/Si substrate interfaces by atomic hydrogen from a thermalised plasma source Sarikov A, Stegemann B, Schmidt M Thin Solid Films, 518(16), 4662, 2010 |
6 |
Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements Rolver R, Berghoff B, Batzner D, Spangenberg B, Kurz H, Schmidt M, Stegemann B Thin Solid Films, 516(20), 6763, 2008 |
7 |
Crystallization of antimony nanoparticles: Pattern formation and fractal growth Stegemann B, Ritter C, Kaiser B, Rademann K Journal of Physical Chemistry B, 108(38), 14292, 2004 |