| 1 |
Experimental study by Secondary Ion Mass Spectrometry focused on the relationship between hardness and sputtering rate in hard coatings
Onorati E, Iacob E, Bartali R, Barozzi M, Gennaro S, Bersani M
Thin Solid Films, 625, 35, 2017 |
| 2 |
Improvement of depth resolution in XPS analysis of fluorinated layer using C-60 ion sputtering
Nobuta T, Ogawa T
Applied Surface Science, 256(5), 1560, 2009 |
| 3 |
A Study on MgO Characteristics of AC Plasma Display Panel Fabricated by Vacuum Sealing Method
Park CS, Tae HS, Kwon YK, Heo EG
Molecular Crystals and Liquid Crystals, 499, 546, 2009 |
| 4 |
Accuracy of calibrated depth by delta-doped reference materials in shallow depth profiling
Tomita M, Tanaka H, Koike M, Kinno T, Hori Y, Yoshida N, Sasaki T, Takeno S
Applied Surface Science, 255(4), 1311, 2008 |
| 5 |
Evaluation of sputtering rate change in the silicon transient region under medium energy O-2(+) sputtering
Takano A, Takenaka H
Applied Surface Science, 255(4), 1348, 2008 |
| 6 |
The optimization of incident angles of low-energy oxygen ion beams for increasing sputtering rate on silicon samples
Sasaki T, Yoshida N, Takahashi M, Tomita M
Applied Surface Science, 255(4), 1357, 2008 |
| 7 |
A study of fused silica micro/nano patterning by focused-ion-beam
Li WX, Lalev G, Dimov S, Zhao H, Pham DT
Applied Surface Science, 253(7), 3608, 2007 |
| 8 |
Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide
Callegari V, Nellen PM, Yang TH, Hauert R, Muller U, Hernandez-Ramirez F, Sennhauser U
Applied Surface Science, 253(22), 8969, 2007 |
| 9 |
Electron irradiation effect on depth profiling of a SiO2/Si(100) surface by Auger electron spectroscopy
Yakabe T, Fujita D, Yoshihara K
Applied Surface Science, 241(1-2), 127, 2005 |
| 10 |
AES depth profiling and interface analysis of C/Ta bilayers
Zalar A, Kovac J, Pracek B, Hofmann S, Panjan P
Applied Surface Science, 252(5), 2056, 2005 |
