화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers
Neudeck PG, Powell JA, Trunek AJ, Spry DJ
Materials Science Forum, 457-460, 169, 2004
2 Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects
Trunek AJ, Neudeck PG, Powell JA, Spry DJ
Materials Science Forum, 457-460, 261, 2004
3 High breakdown field P-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas
Spry DJ, Trunek AJ, Neudeck PG
Materials Science Forum, 457-460, 1061, 2004
4 Characterization of 3C-SiC films grown on 4H-and 6H-SiC substrate mesas during step-free surface hetero-epitaxy
Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang XR, Vetter WM, Dudley M, Skowronski M, Liu JQ
Materials Science Forum, 433-4, 213, 2002