검색결과 : 4건
No. | Article |
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1 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ Materials Science Forum, 457-460, 169, 2004 |
2 |
Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects Trunek AJ, Neudeck PG, Powell JA, Spry DJ Materials Science Forum, 457-460, 261, 2004 |
3 |
High breakdown field P-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas Spry DJ, Trunek AJ, Neudeck PG Materials Science Forum, 457-460, 1061, 2004 |
4 |
Characterization of 3C-SiC films grown on 4H-and 6H-SiC substrate mesas during step-free surface hetero-epitaxy Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang XR, Vetter WM, Dudley M, Skowronski M, Liu JQ Materials Science Forum, 433-4, 213, 2002 |