검색결과 : 2건
No. | Article |
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1 |
Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography Ngamo M, Duguay S, Pichler P, Daoud K, Pareige P Thin Solid Films, 518(9), 2402, 2010 |
2 |
Techniques for depth profiling of dopants in 4H-SiC Osterman J, Hallen A, Anand S, Linnarsson MK, Andersson H, Aberg D, Panknin D, Skorupa W Materials Science Forum, 353-356, 559, 2001 |