검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
| 2 |
A 3.5 kV thyristor in 4H-SiC with a JTE periphery Brosselard P, Bouchet T, Planson D, Scharnholz S, Paques G, Lazar M, Raynaud C, Chante JP, Spahn E Materials Science Forum, 483, 1005, 2005 |
| 3 |
Influence of different peripheral protections on the breakover voltage of a 4H-SiC GTO thyristor Brosselard P, Zorngiebel V, Planson D, Scharnholz S, Chante JP, Spahn E, Raynaud C, Lazar M Materials Science Forum, 457-460, 1129, 2004 |
| 4 |
Fabrication and characterisation of high-voltage SiC-thyristors Zorngiebel V, Scharnholz S, Spahn E, Brosselard P, Arssi N, Chante JP, Planson D, Raynaud C, Spangenberg B, Kurz H Materials Science Forum, 433-4, 883, 2002 |