검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Thick AlN layers grown by HVPE Kovalenkov O, Soukhoveev V, Ivantsov V, Usikov A, Dmitriev V Journal of Crystal Growth, 281(1), 87, 2005 |
| 2 |
4H-SiC Power Schottky diodes. On the way to solve size limiting issues Syrkin A, Dmitriev V, Soukhoveev V, Mynbaeva M, Kakanakov R, Hallin C, Janzen E Materials Science Forum, 457-460, 985, 2004 |
| 3 |
RF performance of HVPE-grown AlGaN/GaN HEMTS Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ Solid-State Electronics, 48(1), 179, 2004 |
| 4 |
GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI Solid-State Electronics, 48(1), 193, 2004 |
| 5 |
Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ Solid-State Electronics, 47(6), 1075, 2003 |
| 6 |
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Pearton SJ, Ren F Solid-State Electronics, 47(10), 1859, 2003 |